Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-11T01:52:22.609Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Temperature RF Plasma Annealing Using A NH3-N2 Gas Mixture

Published online by Cambridge University Press:  21 February 2011

K. Aite ,
F.W. Ragay ,
J. Middelhoek  and
R. Koekoek
K. Aite
Affiliation:
University of Twente, IC Technology and Electronics Lab., P.O.B. 217, 7500 AE, Enschede, The Netherlands.
F.W. Ragay
Affiliation:
University of Twente, IC Technology and Electronics Lab., P.O.B. 217, 7500 AE, Enschede, The Netherlands.
J. Middelhoek
Affiliation:
University of Twente, IC Technology and Electronics Lab., P.O.B. 217, 7500 AE, Enschede, The Netherlands.
R. Koekoek
Affiliation:
TEMPRESS BV., Marconistraat 14, 7903 AG Hoogeveen, The Netherlands.
Get access

Abstract

Techniques such as plasma etching, electron-beam lithography, X-ray lithography, ion etching, sputtering and ion implantation are used to Increase the density of Integration of semiconductor devices. All these techniques introduce undesirable radiation damage into the processed device. Annealing techniques are used to reduce or remove completely the radiation induced defects. The conventional postmetallization low temperature (400–450 °C) annealing using Forming gas (10% H2-90% N2) does not anneal all the charge pentres in many device structures. We have employed a novel low temperature (350°C) rf plasma technique using a NH3-N2 gas mixture to anneal bipolar structures. Vertical pnp transistors made with high energy ion implantation and having poor electrical characteristics have been dramatically improved after 30 min annealing with this new technique. The value of the ideality factor of the base current which was about 1.4 before annealing approached the ideal value of 1.0 after 30 min annealing. Optical emission spectroscopy of the NH3-N2 glow discharge shows the presence of NH radicals, atomic hydrogen and nitrogen ion molecules during the plasma annealing. The atomic hydrogen passivates electrically active defects in the oxide and at the Si/SiO2 interface. A nitridation process occurs at the surface of the top BPSG layer, where a thin silicon nitride film is formed and plays the role of a capping layer which inhibits saturation phenomena. Angle-resolved XPS and ellipsometry have been used to analyze the surface of a silicon wafer exposed to this plasma annealing process. A qualitative model is also proposed to explain the mechanisms involved in this novel NH3-N2 rf plasma annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 190: Symposium M – Plasma Processing and Synthesis of Materials III , 1990 , 329
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Sah, C.T., IEEE Trans. Nucl. Sci., NS-23, pp.1563–68, Dec. 1976.Google Scholar
[2] McCaughan, D.V. and Kushner, R.A., Proc. IEEE, 62, pp. 1236–41, Sept. 1974.Google Scholar
[3] Gdula, R.A., 1977 IEDM, paper 8.2, Washington DC, Dec. 1–3, 1977.Google Scholar
[4] Aitken, J.M., Young, D.R., and Pan, K., J. Appl. Phys. 49, 3386, (1978).Google Scholar
[5] Aitken, J.M., IEEE Trans. Electron. Devices, ED-26, 372(1979).Google Scholar
[6] Schulz, M., Surf. Sci., 132, p. 422, (1983).Google Scholar
[7] Pankove, J.l. and Carlson, D.E., Appl. Phys. Lett., 31, p. 450, (1977).Google Scholar
[8] Peercy, P.S., Nucl. Instrum. Methods, 182, p. 337, (1981).Google Scholar
[9] Johnson, N.M., Biegelsen, D.K., Moyer, M.D., Deline, V.R., and Evans, A.O. Jr., Appl. Phys. Lett., 38, p. 995, (1981).Google Scholar
[10] Pearton, S. J. and Tavendale, A. J., J. Appl. Phys., 54, p. 820, (1983).Google Scholar
[11] Pearton, S. J., Solid-State Electron., 25, p. 305 (1982)Google Scholar
[12] Pearton, S. J. and Tavendale, A., J. Appl. Phys., 54, p. 1375, (1983).Google Scholar
[13] Pearton, S. J. and Hailer, E.E., J. Appl. Phys., 54, 3613 (1983).Google Scholar
[14] Seager, C.H., Sharp, D.J., Panitz, J.K.G., and D'Aiello, R.V., J. Vac. Scd. Techn., 20, p.430, (1982).Google Scholar
[15] Johnson, N.M., Biegelsen, D.K., Moyer, M.D., Appl. Phys. Lett., 40, p. 882, (1982).Google Scholar
[16] Wu, I-W., Lewis, A.G., Huang, T-Y, Chiang, A., IEEE Electron Device Letters, 10, No.3, March 1989.Google Scholar
[17] Aite, K., Ragay, F.W., Middelhoek, J. and Koekoek, R., Patent pending No.89.01637.Google Scholar
[18] Griscom, D.L., J. Appl. Phys., 58(7), Oct. 1985, pp. 2524–32.Google Scholar
[19] Aite, K., Holleman, J., Middelhoek, J. and Koekoek, R., Mat. Res. Soc. Symp. Proc., 130, 1989, pp. 347–53.Google Scholar