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Low Temperature Remote Plasma Assisted Jet Vapor Deposition of Silicon Nitride

Published online by Cambridge University Press:  10 February 2011

J. Veteran ,
C. Hobbs ,
R. Hegde ,
P. Tobin ,
V. Wang ,
H. Tseng ,
G. Kenig ,
M. Hartig ,
T. Tamagawa  and
R. Doran
...Show all authors
J. Veteran
Affiliation:
Motorola APRDL, Austin TX, 78721
C. Hobbs
Affiliation:
Motorola APRDL, Austin TX, 78721
R. Hegde
Affiliation:
Motorola APRDL, Austin TX, 78721
P. Tobin
Affiliation:
Motorola APRDL, Austin TX, 78721
V. Wang
Affiliation:
Motorola APRDL, Austin TX, 78721
H. Tseng
Affiliation:
Motorola APRDL, Austin TX, 78721
G. Kenig
Affiliation:
Motorola APRDL, Austin TX, 78721
M. Hartig
Affiliation:
Motorola APRDL, Austin TX, 78721
T. Tamagawa
Affiliation:
Jet Process Corp., New Haven CT 06511
R. Doran
Affiliation:
Jet Process Corp., New Haven CT 06511
P. Makowicz
Affiliation:
Jet Process Corp., New Haven CT 06511
J. Schmitt
Affiliation:
Jet Process Corp., New Haven CT 06511
B. Halpern
Affiliation:
Jet Process Corp., New Haven CT 06511
J. Z. Zhang
Affiliation:
Jet Process Corp., New Haven CT 06511
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Abstract

As MOSFET dimensions are aggressively scaled, minimizing the thermal budget becomes critical for limiting the diffusion of channel profiles. Unfortunately, high quality dielectrics with low deposition temperatures have not been readily available. Typical room temperature dielectrics are porous and electrically leaky. A promising technique for low temperature dielectric deposition is Jet Vapor Deposition (JVD). [1] Two coaxial quartz nozzles spray the process gases to the substrate surface at super-sonic speeds while a microwave cavity generates a plasma in the nozzle. [2] We have successfully deposited silicon nitride films using SiH4/He and N2/He gas mixtures. These are the first reported JVD results on 200 mm wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 445
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1) Schmitt, J., Halpern, B. U.S. Patent 4788082 (1988).Google Scholar
2) Schmitt, J., Halpern, B. U.S. Patent 5256205 (1993).Google Scholar
3) Burshah, F., (ed.) “Handbook of Deposition Technologies and Coatings”- Chapter 16, “Jet Vapor Deposition”, Halpern, B., Schmitt, J., Noyes Publications, Park Ridge NJ, 1994.Google Scholar
4) Wang, X., Ma, T.P., Cui, G., Tamagawa, T., Golz, J., Karecki, S., Halpern, B., Schmitt, J., “Highly Reliable Silicon Nitride Films Made by Jet Vapor Deposition” 1994 Int'l Conf. on Solid State Devices, p. 856.Google Scholar
5) Tseng, H., Tsui, P., Tobin, P., Mogab, J., Khare, M., Veteran, X.J., Hartig, M., Kenig, G., Wang, V., Blum, R., Halpern, B., Cui, G., Schmitt, J. “Application of JVD Nitride Gate Dielectric to a 0.35 Micron CMOS Process for Reduction of Gate Leakage Current and Boron Penetration” 1997 IEDMGoogle Scholar
6) Khare, M., Guo, X., Wang, X., Ma, J.P., “Ultra-thin Silicon Nitride Gate Dielectric for DeepSub-Micro CMOS Devices” 1997 VLSI Tech. Digest p 51.Google Scholar