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Low Temperature Oxide and Nitride Film Depositions by Simultaneous Use of Ionized Cluster Beam Source and Microwave Ion Source

Published online by Cambridge University Press:  26 February 2011

Toshinori Takagi ,
Gikan H. Takaoka  and
Junzo Ishikawa
Toshinori Takagi
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan
Gikan H. Takaoka
Affiliation:
Ion Beam Engineering Experimental Laboratory Kyoto University, Sakyo, Kyoto 606, Japan
Junzo Ishikawa
Affiliation:
Department of Electronics
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Abstract

Aluminum oxide (A12O3), nitride(A1N) and silicon nitride(SiN) films were prepared at a low substrate temperature of 100°C. Film resistivity was higher than 5x1013 Ω-cm and the breakdown voltage was greater than 3x10° V/cm. The films deposited on sapphire and silicon substrates were very flat, and were chemically and thermally stable. The A1-O, A1-N and Si-N bonds could be formed effectively by using both ionized clusters and reactive gas ions, and transparent and good quality films were obtained. Through these results, the simultaneous use of an ionized cluster beam (ICB) system and a microwave ion source was found to have a high potential for preparing oxide and nitride films at a low substrate temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 391
Copyright
Copyright © Materials Research Society 1998

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References

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