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Low Temperature Mocvd of Silicon-Based Ceramic Films

Published online by Cambridge University Press:  21 February 2011

Honghua Du ,
Yongwoong Bae ,
Bernard Gallois  and
Kenneth E. Gonsalves
Honghua Du
Affiliation:
Department of Materials Science and Engineering Stevens Institute of Technology, Hoboken, NJ 07030
Yongwoong Bae
Affiliation:
Department of Materials Science and Engineering Stevens Institute of Technology, Hoboken, NJ 07030
Bernard Gallois
Affiliation:
Department of Materials Science and Engineering Stevens Institute of Technology, Hoboken, NJ 07030
Kenneth E. Gonsalves
Affiliation:
Department of Chemistry and Chemical Engineering Stevens Institute of Technology, Hoboken, NJ 07030
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Abstract

A liquid methylsilazane compound, [CH3 SiHNH]n, was used, with H2, NH3, and a 60%/40% mixture of NH3/H2, to deposit silicon-based ceramic films in a CVD reactor at 873–1073 K. Characterization of the films by ellipsometry, Fourier transform infrared spectrometry (FTIR) and Auger electron spectrometry (AES) showed that the methylsilazane was pyrolyzed to form silicon carbonitride in H2, and silicon nitride in both NH3 and NH3 /H2, with the incorporation of appreciable amounts of oxygen. The deposition rate increases and the activation energy decreases in order from NH3-, NH3 /H2-, and H2-[CH3SiHNH]n gas mixtures. The temperature dependence of the structural density of the films increases in the same order.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 331
Copyright
Copyright © Materials Research Society 1990

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