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Low Temperature Mocvd Growth of V/Vi Materials VIA a Me3SiNMe2 Elimination Reaction

Published online by Cambridge University Press:  10 February 2011

T. J. Groshens ,
R. W. Gedridge Jr ,
C. K. Lowe-Ma  and
Teresa Cole
T. J. Groshens
Affiliation:
Naval Air Warfare Center Weapons Division, Research and Technology Division, China Lake, CA 93555
R. W. Gedridge Jr
Affiliation:
Naval Air Warfare Center Weapons Division, Research and Technology Division, China Lake, CA 93555
C. K. Lowe-Ma
Affiliation:
Naval Air Warfare Center Weapons Division, Research and Technology Division, China Lake, CA 93555
Teresa Cole
Affiliation:
Naval Air Warfare Center Weapons Division, Research and Technology Division, China Lake, CA 93555
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Abstract

Films of M2Te3 (M = Sb, Bi) were grown on Si(lll) cut 4° off-axis and GaAs(100) substrates between 25°C and 150°C in a low pressure MOCVD reactor via a novel N, Ndimethylaminotrimethylsilane (Me3SiNMe2) elimination reaction using M(NMe2)3 (M = Sb, Bi) and (Me3Si)2Te. X-ray diffraction data indicated that the crystallinity and crystallite orientation of the resulting films were dependent on the substrate structure and growth temperature. Amorphous films were deposited below 50°C. Films deposited at 75°C for Sb2Te3 and 125°C for Bi2Te3 were highly oriented with the (015) reflection plane parallel to the substrate surface. Films of Sb2Te3 deposited at 150°C were highly oriented with the (00ℓ) reflection planes parallel to the substrate surface. The electrical properties and presumably the composition of Bi2Te3 films deposited on Kapton was independent of the V/VI precursor ratio used. This unique deposition reaction provides an alternative route to prepare group V chalcogenide materials which have potential applications in solar cells, reversible optical storage, and thermoelectrics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 271
Copyright
Copyright © Materials Research Society 1996

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References

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