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Low Temperature Metal Organic Chemical Vapor Deposition (LTMOCVD) of Electronic Materials

Published online by Cambridge University Press:  26 February 2011

Alain E. Kaloyeros ,
Paul J. Toscano ,
Richard B. Rizk ,
Victor Tulchinsky  and
Alex Greene
Alain E. Kaloyeros
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Paul J. Toscano
Affiliation:
Chemistry Department, State University of New York at Albany, Albany, NY 12222
Richard B. Rizk
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Victor Tulchinsky
Affiliation:
Physics Department, State University of New York at Albany, Albany, NY 12222
Alex Greene
Affiliation:
Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

High quality amorphous and crystalline silicon carbide thin films were produced by low temperature metal-organic chemical vapor deposition (LTMOCVD) using the organometallic precursor tetraethynylsilane, Si(C2 H)4. LTMOCVD, which was developed by the present investigators, uses single source precursors containing all the elemental constituents desired in the target material already directly bonded. This approach eliminates the inherent limitations of conventional MOCVD where separate precursors are used for each of the individual components of the desired compound. LTMOCVD thus combines the ability to deposit films at low temperatures, which is characteristic of physical deposition techniques, with the ability to provide complete coverage at steps or irregularities on the semiconductor surface, which is characteristic of chemical deposition techniques. In addition, the precursors employed are non-toxic, non-hazardous and easy to handle. Consequently, LTMOCVD can produce compound semiconductors on thermally fragile or chemically sensitive substrates. The SiC films were grown in a hot-wall CVD reactor at a reactor pressure of 10−6-10−3 torr and substrate temperature in the range 300–700°C. Characterization studies were performed using electron diffraction (ED), Auger electron spectroscopy (AES), Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure– contaminant levels were below the detection limits of the techniques employed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 409
Copyright
Copyright © Materials Research Society 1990

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References

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