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Low Temperature Laser-Assisted Gas Phase Reactivity of TMGa with NH3 and Oxygen-Containing Compounds (H2O, CH3OH, O(CH3)2) in Constrained Pulsed Expansions

Published online by Cambridge University Press:  11 February 2011

Alexander Demchuk ,
Michael Lynch ,
Steven Simpson  and
Brent Koplitz
Alexander Demchuk
Affiliation:
APA Optics, Inc., 2950 NE 84th Lane, Blaine, MN 55449, U.S.A.
Michael Lynch
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
Steven Simpson
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
Brent Koplitz
Affiliation:
Department of Chemistry, Tulane University, New Orleans, LA 70118, U.S.A.
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Abstract

The present work reports on the study of III-V gas phase reactivity in constrained gas pulse expansions of trimethylgallium (TMGa) and oxygen derivative compounds (H2O, CH3OH, O(CH3)2) with and without ammonia. The precursors are introduced separately into a high vacuum chamber via a multipulsed gas nozzle assembly. The gas mixtures are then exposed to a UV pulse from an ArF excimer laser (λ=193 nm) and the products are mass analyzed with a quadrupole mass spectrometer. The efficient laser-assisted growth of Ga-O-containing clusters in the form of [(CH3)2GaOR] x, where R is H or CH3, has been revealed. Different behavior can be seen in the reaction of TMG and the oxygen species depending on the presence of H atoms bonded to the oxygen. Significant influence of NH3 on cluster formation and oxygen incorporation is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.7
Copyright
Copyright © Materials Research Society 2003

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References

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