Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-06-19T06:08:53.523Z Has data issue: false hasContentIssue false
  • English
  • Français

A Low Temperature Direct Bonding Method Using an Electron-Beam Evaporated Silicon-Oxide Interlayer

Published online by Cambridge University Press:  15 February 2011

H. W. Park ,
B. K. Ju ,
Y. H. Lee ,
J. H. Park ,
N. Y. Lee ,
K. H. Koh ,
D. K. Shin ,
I. B. Kang ,
N. Samaan  and
M. R. Haskard
...Show all authors
H. W. Park
Affiliation:
Div. of Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, Seoul 130–650, Korea, bkju@willow.kist.re.kr
B. K. Ju
Affiliation:
Div. of Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, Seoul 130–650, Korea, bkju@willow.kist.re.kr
Y. H. Lee
Affiliation:
Div. of Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, Seoul 130–650, Korea, bkju@willow.kist.re.kr
J. H. Park
Affiliation:
Dept. of Electronics Eng., Korea Univ., Seongbuk-Ku, Seoul 136–791, Korea
N. Y. Lee
Affiliation:
Information display Research Institute, Ajou Univ., Suwon, Korea
K. H. Koh
Affiliation:
Information display Research Institute, Ajou Univ., Suwon, Korea
D. K. Shin
Affiliation:
Information display Research Institute, Ajou Univ., Suwon, Korea
I. B. Kang
Affiliation:
Microelectronics Centre, Univ. of South Australia, SA5095, Australia
N. Samaan
Affiliation:
Microelectronics Centre, Univ. of South Australia, SA5095, Australia
M. R. Haskard
Affiliation:
Microelectronics Centre, Univ. of South Australia, SA5095, Australia
M. H. Oh
Affiliation:
Div. of Electronics and Information Technology, KIST, P.O.Box 131, Cheongryang, Seoul 130–650, Korea, bkju@willow.kist.re.kr
Get access

Abstract

In this work, we proposed a direct bonding method using interlayers for single crystalline silicon wafers and glass wafers. Various materials were used for interlayers of thermal oxide, sputtered nitride, electron-beam(E-beam) evaporated silicon oxide and molybdenum. After hydrophilization, samples were spin dried and mated together without external forces. Three types of solutions were used for hydrophilizing the samples. Changes of average surface roughness after hydrophilization of the single crystalline silicon wafer, thermal oxide and E-beam silicon-oxide were inspected using atomic force microscope(AFM). Bonding interfaces of the bonded pairs were observed by scanning electron microscope(SEM). Voids and non-contact areas of the bonding pairs were also inspected using infrared(IR) transmission microscope. Surface energy, tensile strength measurements and breaking tests were also done.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 167
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Henmi, H. et al., Sensors and Actuators A 43, 243 (1994)Google Scholar
[2] Auberton-Herve, A.J., Aspar, B. and Pelloie, J.L., Solid State Technologies, 87 March (1995)Google Scholar
[3] Jiao, Jiwei et al., Sensors and Actuators A 50, 117 (1995)Google Scholar
[4] Kurahashi, T., Onada, M. and Hatton, T., Proc. 2nd Int. Symp. Micro Machine and Human Science, Nagoya, Japan, 173 Oct. (1991)Google Scholar
[5] Stengl, R., Ahn, K.Y. and Gosele, U., Japanese Journal of Applied Physics Lett. 27, L2364 (1988)Google Scholar