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Low Temperature Deposition of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method

Published online by Cambridge University Press:  09 August 2011

M. Ichikawa ,
J. Takeshita ,
A. Yamada  and
M. Konagai
M. Ichikawa
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
J. Takeshita
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
A. Yamada
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
M. Konagai
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo, Japan
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Abstract

Hot wire (HW) cell method has been newly developed and successfully applied to grow polycrystalline silicon films at a low temperature with a relatively high growth rate. In the HWcell method, silane is decomposed by reaction with a heated tungsten wire placed near the substrate. It is found that polycrystalline silicon films can be obtained at substrate temperatures of 175-400°C without hydrogen dilution. The film crystallinity is changed from polycrystalline to amorphous with decreasing the total pressure. The X-ray analysis clearly showed that the films grown at the filament temperature of 1700°C have a very strong (220) preferential orientation. The films consist of large grains as well as small grains, and it was found from cross-sectional SEM that the films have columnar structure. These results suggested that the HW-cell method would be a promising candidate to grow device-grade polycrystalline silicon films for photovoltaic application.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 487
Copyright
Copyright © Materials Research Society 1999

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