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Low Temperature Deposited Highly-Conductive N-type SiC Thin Films

Published online by Cambridge University Press:  10 February 2011

Kuan-Lun Cheng ,
Huang-Chung Cheng ,
Wen-Horng Lee ,
Chiapyng Lee  and
Tri-Rung Yew
Kuan-Lun Cheng
Affiliation:
Dept. of Electronics Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC.
Huang-Chung Cheng
Affiliation:
Dept. of Electronics Eng., National Chiao-Tung University, Hsinchu, Taiwan, ROC.
Wen-Horng Lee
Affiliation:
Dept. of Chemical Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC.
Chiapyng Lee
Affiliation:
Dept. of Chemical Eng., National Taiwan Institute of Technology, Taipei, Taiwan, ROC.
Tri-Rung Yew
Affiliation:
United Microelectronics Co., ATD-3, Science-based Park, Hsinchu, Taiwan, ROC.
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Abstract

Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell.… etc. Here in this paper, we study the influences of the diluted PH3 flow rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH3 flow rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H2 flow rate is above or below 40 seem, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 463
Copyright
Copyright © Materials Research Society 1997

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References

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