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Low - Temperature Defect - Induced Aging of GaAs Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  16 February 2011

I. Szafranek ,
S. A. Stockman ,
M. Szafranek ,
M. J. McCollum ,
M. A. Plano ,
W. R. Miller  and
G. E. Stillman
I. Szafranek
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
S. A. Stockman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
M. Szafranek
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
M. J. McCollum
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
M. A. Plano
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
W. R. Miller
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
G. E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
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Abstract

Degradation in optical and electrical properties has been observed for high-purity and high-mobility p-type GaAs layers which contain significant concentrations of an unidentified shallow acceptor-like defect, labeled “A”, that is frequently incorporated in crystals grown by molecular beam epitaxy. Low-temperature photoluminescence and variable temperature Hall-effect measurements were employed to monitor the aging process in samples stored for about one year at room temperature. Profound changes in the exciton recombination spectra, indicative of increasing concentration of the “A” defect, have been accompanied by a decrease in hole mobility and an increase in carrier concentration. These results are discussed in the context of the acceptor-pair defect model, originally proposed by Eaves and Halliday [J. Phys. C: Solid State Phys. 17, L705 (1984)].

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 184: Symposium F – Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures , 1990 , 109
Copyright
Copyright © Materials Research Society 1990

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References

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