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Low Temperature Copper-induced Crystallization Technique for Germanium on Flexible PET, by Means of Mechanical Compressive Stress

Published online by Cambridge University Press:  15 February 2011

B. Hekmatshoar ,
D. Shahrjerdi ,
S. Mohajerzadeh ,
A. Khakifirooz ,
A. Akhavan  and
M. Robertson
B. Hekmatshoar
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail:smohajer@vlsi.uwaterloo.ca
D. Shahrjerdi
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail:smohajer@vlsi.uwaterloo.ca
S. Mohajerzadeh
Affiliation:
Department of Electrical and Computer Engineering, Thin Film laboratory, University of Tehran, Tehran, Iran, +98-21 801 1235, e-mail:smohajer@vlsi.uwaterloo.ca
A. Khakifirooz
Affiliation:
Microsystems Technology Laboratories, Massachusetts Institute of Technology
A. Akhavan
Affiliation:
ECE Department, University of Waterloo, Canada
M. Robertson
Affiliation:
Department of Physics, Acadia University, Wolfville, NS B4P 2R6
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Abstract

Low temperature copper-induced crystallization of amorphous germanium (a-Ge) has been significantly enhanced by applying mechanical compressive stress during thermal post-treatment. Manipulation of this technique, alongside with proper patterning of the a-Ge layer before thermo-mechanical process, has led to growth of device-quality poly-Ge layer on flexible PET substrate at temperatures as low as 130°C. Flexibility of the substrate allows the efficient application of uniaxial compressive stress by bending the PET sheets inward. Effects of compressive stress and ultimate crystallization of the Ge layer has been verified by electrical sheet resistance and Hall mobility measurements, and analyzed by XRD, SEM, TEM and RAMAN spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H6.11
Copyright
Copyright © Materials Research Society 2003

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