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Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study

Published online by Cambridge University Press:  10 February 2011

J. Chaudhur ,
K. Ignatiev ,
J. H. Edgar ,
Z. Y. Xie  and
Y. Gao
J. Chaudhur
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133;
K. Ignatiev
Affiliation:
Wichita State University, Mechanical Engineering Department, Wichita, KS 67260-0133;
J. H. Edgar
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
Z. Y. Xie
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
Y. Gao
Affiliation:
Kansas State University, Manhattan, KS 66506-5102.
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Extract

Highly perfect 3C-SiC thin films, on 6H-SiC deposited by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios were characterized by x-ray high resolution triple crystal diffractometry and double crystal topographic methods. The films were epitaxial with a low defect density present (mostly in the range of 107/cm2). X-ray topography revealed stacking faults, low angle grain boundaries, dislocations and inversion double positioning boundaries present in the film and substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 169
Copyright
Copyright © Materials Research Society 1998

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References

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