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Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides

Published online by Cambridge University Press:  15 February 2011

Chao Sung Lai ,
Chung Len Lee ,
Tan Fu Lei ,
Tien Sheng Chao ,
Chun Hung Peng  and
Han Ching Wang
Chao Sung Lai
Affiliation:
Department of Electronics Engineering and Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Chung Len Lee
Affiliation:
Department of Electronics Engineering and Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Tan Fu Lei
Affiliation:
Department of Electronics Engineering and Institute of Electronics National Chiao Tung University, Hsinchu, Taiwan, R.O.C.
Tien Sheng Chao
Affiliation:
National Nano Device Laboratory, Hsinchu, Taiwan, R.O.C.
Chun Hung Peng
Affiliation:
Windbond Electronics Corp., Hsinchu, Taiwan, R.O.C.886- 35- 731853, 886- 35- 725807
Han Ching Wang
Affiliation:
Windbond Electronics Corp., Hsinchu, Taiwan, R.O.C.886- 35- 731853, 886- 35- 725807
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Abstract

The electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N20 nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-canrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 405
Copyright
Copyright © Materials Research Society 1996

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