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Low Temperature (≥ 400°C) Silicon Pyrometry AT 1.1μm with Emissivity Correction

Published online by Cambridge University Press:  15 February 2011

J. C. Sturm  and
A. Reddy
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544, USA
A. Reddy
Affiliation:
Department of Electrical Engineering, Princeton University Princeton, NJ 08544, USA
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Abstract

In this work we have examined the experimental low-temperature limits of 1.1μm pyrometry for the measurement of the temperature of silicon wafers and aluminumcoated silicon wafers at temperatures under 700°C in RTP chambers. In-situ emissivity correction in the same range has also been demonstrated with a single detector for radiation and reflection measurements. Temperatures as low as 450°C have been measured on metallized surfaces with an accuracy of better than 10°C without any a priori knowledge of the wafer emissivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 387: Symposium P – Rapid Thermal and Integrated Processing IV , 1995 , 137
Copyright
Copyright © Materials Research Society 1995

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References

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