Low Resistance Contacts to P-Type GaN

Taek Kim; Jinseok Khim; Suhee Chae; Taeil Kim

doi:10.1557/PROC-468-427

Abstract

We report the low resistance ohmic contacts to p-GaN using a Pd/Au bimetal scheme. A specific contact resistivity of 9.1 × 10-3 Ω-cm2 was obtained after annealing. The metallization was e-beam evaporated on 2 μm-thick p-GaN (∼ 9 × 1016/cm3) layers grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). The comparison with other contacts showed that the contact resistivity of the Pd/Au contacts was at least one order smaller than those of Pt/Au and Ni/Au contacts.

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Low Resistance Contacts to P-Type GaN

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