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Low Pressure Omcvd Growth of GaAs on InP for Fet and Quantum Well Laser Fabrication

Published online by Cambridge University Press:  28 February 2011

R. Bhat ,
Y-H. Lo ,
C. Caneau ,
C.J. Chang-Hasnain ,
B.J. Skromme ,
D.M. Hwang ,
C.E. Zah  and
M.A. Koza
R. Bhat
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
Y-H. Lo
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
C. Caneau
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
C.J. Chang-Hasnain
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
B.J. Skromme
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
D.M. Hwang
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
C.E. Zah
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
M.A. Koza
Affiliation:
Bellcore, 331 Newman Springs Rd., Red Bank, NJ 07701
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Abstract

Gallium arsenide epitaxial layers with excellent morphology have been grown by organometallic chemical vapor deposition (OMCVD) on (100) and 2-3° off (100) InP substrates by a modified two-step growth commonly used for GaAs on Si. The layers have been characterized by X-ray diffraction, cross-sectional transmission electron microscopy (TEM), low temperature photoluminescence (PL) and Hall measurements. 1 µm gate GaAs metal-semiconductor field effect transistors (MESFETs) with transconductances as high as 220 mS/mm have been fabricated. These MESFETs have been integrated with buried heterostructure and V-groove InGaAsP lasers. The V-groove laser -MESFET OEIC transmitter has been shown to be capable of direct modulation at 5 Gb/sec bit rate. Finally we have also demonstrated GaAs single quantum well lasers with threshold currents as low as 800 A/cm2for 50 µm wide broad area gain guided devices with 1.25 mm long cavities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 367
Copyright
Copyright © Materials Research Society 1989

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