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Lomer Dislocations in (0 0 1) GaSb/GaAs Heterostructure.

Published online by Cambridge University Press:  25 February 2011

André M. Rocherj ,
Joon M. Kang  and
Anne Ponchet
André M. Rocherj
Affiliation:
Centre d'Elaboration des Matdriaux et d'Etudes Structurales, Centre National de la Recherche Scientifique, 29, rue Jeanne Marvig, F-31055, Toulouse, France.
Joon M. Kang
Affiliation:
Centre d'Elaboration des Matdriaux et d'Etudes Structurales, Centre National de la Recherche Scientifique, 29, rue Jeanne Marvig, F-31055, Toulouse, France.
Anne Ponchet
Affiliation:
Centre d'Elaboration des Matdriaux et d'Etudes Structurales, Centre National de la Recherche Scientifique, 29, rue Jeanne Marvig, F-31055, Toulouse, France.
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Abstract

The (001) GaSb/GaAs heterostructure reveals a nearly complete relaxation of the misfit strain. This relaxation is connected to the highly regular network of Lomer dislocations which is a consequence of island growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 91
Copyright
Copyright © Materials Research Society 1992

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References

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