Hostname: page-component-8448b6f56d-qsmjn Total loading time: 0 Render date: 2024-04-25T06:16:47.574Z Has data issue: false hasContentIssue false

Localized Influence of Solute on the Stacking Fault Energy of Dilute Al-Based Solid Solutions

Published online by Cambridge University Press:  21 February 2011

C. Lane Rohrer*
Affiliation:
Aluminum Company of America, Alcoa Technical Center, Alcoa Center, PA 15069-0001
Get access

Abstract

The stacking fault energy (SFE) is widely used to classify the mechanical behavior of pure metals. In alloys, however, the experimentally observed SFE is strongly influenced by localized solute effects. To further understand these effects on dislocation structure and on the observed SFE, solute segregation to an extended edge dislocation dipole, delineating two stacking faults, was studied in dilute Al:Cu, Al:Ag, and Al:Cu, Ag solid solutions. Cu and Ag were chosen to isolate solute size and modulus effects, Cu being smaller than Al, while Ag and Al are essentially the same size. Atomistic Monte Carlo results showed little change in the partial dislocation spacing in the binary systems as compared to the spacing in pure Al, even though Cu was observed to segregate to the compressive regions of the dislocation dipoles, forming widespread atmospheres, while Ag formed randomly distributed Ag-rich zones. However, in ternary Al:Cu,Ag simulations, the Ag apparently inhibited the Cu from distributing across the width of the extended dislocations, both Ag and Cu forming small clusters near or on the partial dislocations which increased the partial dislocation spacing. Results will be discussed in light of interpretations of experimental SFE determinations, emphasizing the importance of the localized solute distribution on the SFE.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Gallagher, P. C. J., Metall. Trans. 1, 2429 (1970).CrossRefGoogle Scholar
2. Daw, M. S. and Baskes, M. I., Phys. Rev. Lett. 50, 1285 (1983); Phys. Rev. B 29, 6443 (1984).CrossRefGoogle Scholar
3. Rohrer, C. Lane, Modelling Simul. Mater. Sci. Eng. 2, (1993).Google Scholar
4. Foiles, S. M. and Daw, M. S. (private communication).Google Scholar
5. Tofpenets, R. L. and Vasil'yeva, L. A., Fiz. Met. Metalloved. 54, 381 (1982).Google Scholar
6. Rohrer, C. Lane, submitted to J. Mater. Res. (1993).Google Scholar