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Liquid Phase Homoepitaxial Growth of 4H-SiC Crystals and Fabrication Techniques of Bluish-Purple Light-Emitting Diodes

Published online by Cambridge University Press:  26 February 2011

Y. Ueda ,
T. Nakata ,
K. Koga ,
Y. Matsushita ,
Y. Fujikawa ,
T. Uetani ,
T. Yamaguchi  and
T. Niina
Y. Ueda
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
T. Nakata
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
K. Koga
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
Y. Matsushita
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
Y. Fujikawa
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
T. Uetani
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
T. Yamaguchi
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
T. Niina
Affiliation:
Semiconductor Research Center, Sanyo Electric Co., Ltd, 1-18-13 Hashiridani, Hirakata, Osaka 573 Japan
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Abstract

4H-SiC single crystals have been fabricated on the seeds of 6H-type crystals by the vacuum-sublimation (modified Lely) method at a temperature of 2400 °C and under a pressure of 2–60 mbar in an argon atmosphere. Liquid phase epitaxy was attempted by using a dipping method with a 4H-SiC off-orientation substrate whose {0001} C-face varied toward the <1120> direction by 5 degrees. The polytype of the grown crystals was found to be the 4H-type through measurements of Raman scattering and photoluminescence. P-n junction diodes were epitaxially obtained on 4H-SiC substrates. Aluminum and nitrogen were doped as acceptors and donors, respectively. The LED emitted bluish-purple light with a high brightness of 2.2 mcd at a forward current of 20 mA. Other characteristics were as follows : 420–425 nm peak wavelength, 90 % color purity, and a light output of 4 μW.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 427
Copyright
Copyright © Materials Research Society 1990

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References

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