Hostname: page-component-7479d7b7d-wxhwt Total loading time: 0 Render date: 2024-07-11T18:46:24.803Z Has data issue: false hasContentIssue false
  • English
  • Français

Line Length Dependence of Small, Electromigration Induced Resistance Changes in Aluminum

Published online by Cambridge University Press:  15 February 2011

J.R. Kraayeveld ,
A.H. Verbruggen ,
A.W-J. Willemsen  and
S. Radelaar
J.R. Kraayeveld
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology Lorentzweg 1, 2628CJ Delft, The Netherlands.
A.H. Verbruggen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology Lorentzweg 1, 2628CJ Delft, The Netherlands.
A.W-J. Willemsen
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology Lorentzweg 1, 2628CJ Delft, The Netherlands.
S. Radelaar
Affiliation:
Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology Lorentzweg 1, 2628CJ Delft, The Netherlands.
Get access

Abstract

Two series of experiments were carried out to investigate the line length dependence of changes in the electrical resistance caused by passing a DC current through thin film Al conductors. First, the effect of adding side branches with a spacing of 5 μ m to 150 μ m long lines was studied. Experiments performed at T = 148 °C and at a DC current density of 0.5 MA/cm2 showed three effects due to adding the side branches: i) the magnitude of the resistance changes is reduced, ii) the resistance changes saturate on a time scale of one hour, and iii) the resistance changes fully recover after switching off the current. In the second series of experiments the current, temperature and line length dependence of resistance changes induced in short (3-100 μ m) lines between bonding pads were studied. For current densities smaller than a certain length dependent critical value the resistance saturates after applying the current and relaxes back to the original value after removing the current. The time to relax back, which is comparable to the time to reach saturation, is proportional to the sample length squared. This and the activation energy derived from the temperature dependence of the relaxation process suggest strongly that the observed time dependence of the resistance changes is determined by grain boundary diffusion (electromigration) along the whole length of the line.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 391: Symposium T – Materials Reliability in Microelectronics V , 1995 , 507
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Scorzoni, A., Neri, B., Caprile, C., and Fantini, F., Materials Science Reports, 7 (4,5), 143–220 (1991).Google Scholar
2 Lloyd, J.R. and Koch, R.H., Appl. Phys. Lett., 52, 194 (1988).Google Scholar
3 Niehof, J., Flynn, P.A., and Maloney, T.J., in 3rd European Symposium on Reliability of Electron Devices. Failure Physics and Analysis ESREF 92, (1992), pp. 359 362.Google Scholar
4 Möckl, U.E., Lloyd, J.R., and Arzt, E., in Materials Reliability in Microelectronics III, edited by Rodbell, K.P., Filter, W.F., Frost, H.J., and Ho, P.S. (Mater. Res. Soc. Proc. 309, Pittsburgh, 1993), pp. 301–306.Google Scholar
5 Kraayeveld, J.R., Verbruggen, A.H., and Radelaar, S., in Materials Reliability in Microe lectronics III, edited by Rodbell, K.P., Filter, W.F., Frost, H.J., and Ho, P.S. (Mater. Res. Soc. Proc. 309, Pittsburgh, 1993), pp. 307–312.Google Scholar
6 Scorzoni, A., De Munari, I., and Stulens, H., in Advanced Metallization for Devices and Circuits - Science. Technology, and Manufacturability III, edited by Murarka, S.P., Tu, K.N., Katz, A., and Maex, K. (Mater. Res. Soc. Proc. 337, Pittsburgh, 1994), pp. 515–526.Google Scholar
7 Kirchheim, R. and Kaeber, U., J. Appl. Phys. 70 (1), 172–181, (1991).Google Scholar
8 Blech, I.A., J. Appl. Phys. 47, 1203 (1976).Google Scholar
9 Kraayeveld, J.R., Verbruggen, A.H., Willemsen, A.W-J., and Radelaar, S., (unpublished)Google Scholar
10 d'Heurle, F.M. and Ho, P.S., in Thin Films - Interdiffusion and Reactions (John Wiley & Sons, New York, 1978), Chapter 8, pp. 243–303.Google Scholar