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Limitations to the use of Sb as a Surfactant During SiGe MBE

Published online by Cambridge University Press:  10 February 2011

Glenn G. Jernigan ,
Conrad L. Silvestre ,
Mohammad Fatemi ,
Mark E. Twigg  and
Phillip E. Thompson
Glenn G. Jernigan
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave. SW, Washington DC 20375
Conrad L. Silvestre
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave. SW, Washington DC 20375
Mohammad Fatemi
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave. SW, Washington DC 20375
Mark E. Twigg
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave. SW, Washington DC 20375
Phillip E. Thompson
Affiliation:
Naval Research Laboratory, Electronics Science and Technology Division, 4555 Overlook Ave. SW, Washington DC 20375
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Abstract

The use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 289
Copyright
Copyright © Materials Research Society 1998

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