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Light-Induced Effects on Fluorinated Amorphous and Microcrystalline Silicon Films

Published online by Cambridge University Press:  10 February 2011

Hong-Seok Choi ,
Keun-Ho Jang ,
Jhun-Suk Yoo  and
Min-Koo Han
Hong-Seok Choi
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Keun-Ho Jang
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Jhun-Suk Yoo
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
Department of Electrical Engineering, Seoul National University, San 56-1, Shinrim-dong, Kwanak-ku, Seoul 151-742, Korea
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Abstract

The fluorinated amorphous and microcrystalline silicon (a,μc-Si:H;F) films have been prepared by rf plasma enhanced chemical vapor deposition (PECVD) with SiH 4 and SiF 4 gas mixtures. The stretching Si-O (1085 cm-1) and SiH2 (2100 cm-1) bands estimated from infrared (IR) spectroscope data have related to the evolution of crystallinity and the optical band gap was shifted by introducing Si-O bonds. The sub-band gap absorption coefficient in a,μc-Si:H;F films was about one order lower than that in hydrogenated amorphous silicon film (a-Si:H). The subband gap absorption in a-Si:H;F film was comparable to that in tic-Si:H;F films. The lightinduced degradation of a,μc-Si:H;F films were also suppressed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 323
Copyright
Copyright © Materials Research Society 1996

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References

1. Guha, S., J. Non-Crys. Solids 78, 1451(1985).Google Scholar
2. Kaneko, T., Wakagi, M., Onisawa, K. and Minemura, T., Appl. Phys. Lett. 64, 1865(1994).Google Scholar
3. Kakinuma, H., Mohri, M. and Tsuruoka, T., J. Appl. Phys. 77, 646(1995).Google Scholar
4. Mohri, M., Kakinuma, H. and Tsuruoka, T., IEEE IEDM Tech. Digest, 673(1992).Google Scholar
5. Okada, Y., Chen, J., 1.Campell, H., Fauchet, P.M. and Wagner, S., J. Appl. Phys. 67, 1757(1990).Google Scholar
6. Street, R.A., Hack, M. and Jackson, W.B., Phys. Rev. Lett. B 37, 4209(1988).Google Scholar
7. Kurtin, S., Shifrin, G. A. and McGill, T. C., Appl. Phys. Lett. 14, 223(1969).Google Scholar
8. Noguchi, T., Hayashi, H. and Ohshima, T., J. Electrochem. Soc. 134, 1771(1987).Google Scholar