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Light-Induced Degradation of a-Si:H - A Comparison of Short-Laser-Pulse and Steady Light Degradation

Published online by Cambridge University Press:  15 February 2011

P. Tzanetakis ,
N. Kopidakis ,
M. Androulidakp ,
C. Kalpouzos ,
P. Stradins  and
H. Fritzsche
P. Tzanetakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
N. Kopidakis
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
M. Androulidakp
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
C. Kalpouzos
Affiliation:
Institute of Electronic Structure and Laser, FORTH, Heraklion, Greece
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL 60637
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Abstract

An undoped and a compensated a-Si:H sample have been degraded by 17–34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap absorption a. For the same change in a pulses degrade the photoconductivity σp more than CW light and more strongly for exposures at 78K than at 300K. The lack of correlation between σp and N suggests that light soaking causes additional damage besides an increase in N. This additional effect is more pronounced for pulse and low temperature exposures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 245
Copyright
Copyright © Materials Research Society 1995

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References

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