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Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

Guozhen Yue ,
Liangfan Chen ,
Qi Wang ,
Eugene Iwaniczko ,
Guanglin Kong ,
Jonathan Baugh ,
Yue Wu  and
Daxing Han
Guozhen Yue
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing, China
Liangfan Chen
Affiliation:
Solarex, 826 Newtown-Yardlly Road, Newtown, PA 18940, USA
Qi Wang
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Eugene Iwaniczko
Affiliation:
National Renewable Energy Laboratory, Golden, CO 80401, USA
Guanglin Kong
Affiliation:
Institute of Semiconductors, Academia Sinica, Beijing, China
Jonathan Baugh
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
Yue Wu
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
Daxing Han
Affiliation:
Dept. of Physics & Astronomy, Univ. of North Carolina, Chapel Hill, NC 27599-3255, USA
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Abstract

Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from ∼2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number ∼2000 cm−1, and the less stable one exhibits a decrease at ∼2040 cm−1and an increase at ∼1880 cm−1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 685
Copyright
Copyright © Materials Research Society 1998

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References

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