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Ligand Structure Effect on A Divalent Ruthenium Precursor for MOCVD

Published online by Cambridge University Press:  31 January 2011

Kazuhisa Kawano ,
Hiroaki Kosuge ,
Noriaki Oshima ,
Tadashi Arii ,
Yutaka Sawada  and
Hiroshi Funakubo
Kazuhisa Kawano
Affiliation:
kawano@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Hiroaki Kosuge
Affiliation:
h_kosuge@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Noriaki Oshima
Affiliation:
ohsima@tosoh.co.jp, TOSOH, Tokyo Research Laboratory, Ayase, Kanagawa, Japan
Tadashi Arii
Affiliation:
t-arii@rigaku.co.jp, Rigaku, Thermal Analysis Group, Akishima, Tokyo, Japan
Yutaka Sawada
Affiliation:
sawada@chem.t-kougei.ac.jp, Tokyo Polytechnic University, Atsugi, Kanagawa, Japan
Hiroshi Funakubo
Affiliation:
funakubo.h.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative and Engineered Materials, Yokohama, Japan
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Abstract

Thermal properties of five divalent ruthenium precursors with three types of structures were examined by thermal analyses. Their volatilities and the relationships between their structure and thermal stability were compared by TG analysis. Precursor volatility was found to be inversely proportional to molecular weight. The DSC result showed that substituting a linear pentadienyl ligand for a cyclopentadienyl ligand decreased the thermal stability of a precursor and precursors could be liquefied by attaching an alkyl group longer than methyl group to a Cp ligand. As a result of TG-MS analyses for Ru(DMPD)(EtCp) and Ru(EtCp)2, 2,4-dimethyl-1,3-pentadiene was found to be a thermolysis product of Ru(DMPD)(EtCp) though no thermolysis products of Ru(EtCp)2 were observed. These results show that the volatility and decomposition temperature of a divalent ruthenium precursor can be designed by adjusting the precursor's structure.

Keywords

chemical vapor deposition (CVD) (deposition)Rumemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1155: Symposium C – CMOS Gate-Stack Scaling–Materials, Interfaces and Reliability Implications , 2009 , 1155-C09-11
Copyright
Copyright © Materials Research Society 2009

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