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Lif-Diagnostics of Cr During Laser-Induced Deposition from Cr(CO)6

Published online by Cambridge University Press:  25 February 2011

D. Rieger ,
B. Rager  and
F. Bachmann
D. Rieger
Affiliation:
Siemens AG, Corporate Production and Logistics Department, Otto-Hahn-Ring 6, D−8000 München 83, Federal Republic of Germany
B. Rager
Affiliation:
Siemens AG, Corporate Production and Logistics Department, Otto-Hahn-Ring 6, D−8000 München 83, Federal Republic of Germany
F. Bachmann
Affiliation:
Siemens AG, Corporate Production and Logistics Department, Otto-Hahn-Ring 6, D−8000 München 83, Federal Republic of Germany
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Abstract

The spatial and temporal distribution of Cr* in a laser-CVD arrangement has been studied by laser-induced fluorescence (LIF). Low excited Cr*(a5S2) atoms are produced by dissociation of Cr(CO)6 by a KrF laser ( λ = 248 nm) via two photon absorption. An observed disappearance of Cr* after photolysis is due to reaction with photofragments, quenching via collision relaxation and deposition. The diffusion constants for Cr* in He/Cr(CO)x mixtures could be determined. The Cr* density in the vicinity of a sample drops sharply by heating the sample. The decrease is due to thermal decomposition of Cr(CO)6 with an activation energy of 0.11 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 91
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Konstantinov, L., Nowack, R., and Hess, P., Appl. Phys. A 47, 171, (1988)Google Scholar
2. Gluck, N.S., Wolga, G.J., Bartosch, C.E., Ho, W., Ying, Z., J. Appl. Phys. 61, 998 (1987)Google Scholar
3. Singh, O.N., Hopman, H.J., Microelectronics Journal, 18, 39, (1987)Google Scholar
4. Breiland, W.G., Ho, P., Coltrin, M.E., J. Appl. Phys. 60, 1505 (1986)Google Scholar
5. Tyndall, G.W., Jackson, R.L., J. Am. Chem. Soc. 109, 582, (1987) and J. Chem. Phys. 89, 1364 (1988)Google Scholar
6. Kiess, C.C., J. Res. Natl. Bur. Stand. 51, 247 (1957)Google Scholar
7. Daily, J.W., Appl. Optics 17, 225 (1987)Google Scholar
8. Shinn, N.D. and Madey, T.E., J. Chem. Phys. 83, 5928 (1985)Google Scholar