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Li-Defect Reactions During Low Dose Ion Implantation of 8LI into ZNSE Single Crystals

Published online by Cambridge University Press:  15 February 2011

M. Restle ,
M. Dalmer ,
U. Wahl  and
H. Hofsäss
M. Restle
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M621, D-78457 Konstanz, Germany
M. Dalmer
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach M621, D-78457 Konstanz, Germany
U. Wahl
Affiliation:
Katholike Universiteit Leuven, IKS, Celestijnenlaan 200D, B-3001 Leuven, Belgium
H. Hofsäss
Affiliation:
Universität Göttingen, Zweites Physikalisches Institut, Bunsenstrasse 7-9, D-37073 Göttingen, Germany ISOLDE Collaboration, CERN, CH-1211 Geneva 23, Switzerland
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Abstract

We present lattice site location and diffusion studies of ion implanted 8Li in ZnSe single crystals at sample temperatures between 180 K and 550 K using the emission channeling technique. Below 200 K, Li is immobile in ZnSe and occupies tetrahedral interstitial sites. Above 250 K, interstitial Li becomes mobile and for an accumulated dose above 1×1012 cm-2 the majority of the implanted Li atoms occupy substitutional sites, presumably Zn sites. However, for room temperature implantation at doses below 1×1012 cm-2, the majority of implanted Li still occupies interstitial sites. This behavior is explained by recombination processes between Zn interstitials and vacancies, thus reducing the vacancy concentration and maintaining a high fraction of interstitial Li. Substitutional Li is stable up to about 500 K and diffuses out for temperatures above. We calculate 0.5 eV for the migration energy of interstitial Li and 1.38 eV for the binding energy of substitutional Li.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 49
Copyright
Copyright © Materials Research Society 1999

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