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Lattice Relaxation of Deep Defects in Light-Soaked N-Type Hydrogenated Amorphous Silicon*

Published online by Cambridge University Press:  21 February 2011

Thomas M. Leen  and
J. David Cohen
Thomas M. Leen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403.
J. David Cohen
Affiliation:
Department of Physics, University of Oregon, Eugene, OR 97403.
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Abstract

We report evidence for a deep defect exhibiting very large lattice relaxation in n-type a-Si:H. In light-soaked partially-annealed samples with low phosphorus doping levels one obtains large controlled variation of the Fermi energy position in the mobility gap. Examination by photocapacitance spectroscopy of a sample having a Fermi energy near the minimum in the density of states shows dramatic change in the shape of the photocapacitance spectra. We interpret this as strong evidence for lattice relaxation of deep defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 39
Copyright
Copyright © Materials Research Society 1991

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Footnotes

*

Research supported by NSF Grant DMR 8903383

References

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