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Lattice Location of Deuterium in Plasma and Gas Charged Mg Doped GaN

Published online by Cambridge University Press:  03 September 2012

W. R. Wampler ,
J. C. Barbour ,
C. H. Seager ,
S. M. Myers ,
A. F. Wright  and
J. Han
W. R. Wampler
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
C. H. Seager
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
S. M. Myers
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
A. F. Wright
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-1056
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Abstract

We have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced by exposure to gas phase or ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Results of channeling measurements are compared with channeling simulations for hydrogen at lattice locations predicted by density functional theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W10.7
Copyright
Copyright © Materials Research Society 1999

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