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Lateral Epitaxial Growth of Thick Polysilicon Films on Oxidized 3-Inch Wafers

Published online by Cambridge University Press:  15 February 2011

G. K. Celler ,
Mcd. Robinson ,
D. J. Lischner  and
T. T. Sheng
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
Mcd. Robinson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
D. J. Lischner
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
T. T. Sheng
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974, USA
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Abstract

Recently we reported the first successful crystallization from the melt of 15,μm thic Si films on SiO2. In this technique of Lateral Epitaxial Growth over Oxide (LEGO), crystallization is initiated at seeding vias in SiO2 and propagates over the amorphous insulator, resulting in high structural quality of the grown film. Uniform and bow-free crystallization of complete 3-inch wafers occurs in <60 sec in a special furnace, with wafers placed between a bank of high intensity tungsten halogen lamps and a water cooled base.

In this paper we provide further details of crystallization procedure and new structural characterization data. The mechanism of LEGO crystallization and its limitations are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 575
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Bell Laboratories, Allentown, Pennsylvania 18103, USA

References

REFERENCES

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