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Lateral Diffusion of Platinum Through Pt2Si in Pt/Si Couples

Published online by Cambridge University Press:  15 February 2011

L. R. Zheng ,
L. S. Hung  and
J. W. Mayer
L. R. Zheng*
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, (U.S.A.)
L. S. Hung*
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, (U.S.A.)
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853, (U.S.A.)
*
† Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
‡ Present address: Department of Electrical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, U.S.A.
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Abstract

Lateral diffusion couples formed by depositing platinum islands on silicon layers on Al2O3 were used in conjunction with scanning electron microprobe measurements to investigate the growth of platinum silicides in the temperature range 400–700 °C. The phase Pt2Si grows over a length of 4–30 μm with a rate proportional to the square root of time and an activation energy of approximately 1.3 eV. With samples containing 7 at.% Rh in the platinum, the growth rate of Pt2Si is reduced and the activation energy is increased to about 2.0 eV. In these Pt–7at.% Rh samples, electron-induced X-ray measurements indicate that rhodium remains in the original deposited region while both platinum and silicon diffuse in the formed Pt2Si region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 207
Copyright
Copyright © Materials Research Society 1982

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References

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