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Lateral Diffusion and Capture of Iron in P-Type Silicon

Published online by Cambridge University Press:  26 February 2011

Kevin L. Beaman ,
Aditya Agarwal ,
Sergei V. Koveshnikov  and
George A. Rozgonyi
Kevin L. Beaman
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
Aditya Agarwal
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
Sergei V. Koveshnikov
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
George A. Rozgonyi
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC
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Abstract

The lateral motion of iron impurities was observed and studied in ptype iron contaminated silicon. The lateral diffusion was induced by and then measured using Schottky diodes with a special interdigitated fingers design. Capture of the impurities was done by diffusing to laterally placed dislocation loops formed by a self aligned ion implantation. Lateral changes in Fe concentration were determined using capacitance-voltage and deep level transient spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 291
Copyright
Copyright © Materials Research Society 1995

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References

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