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Laser-Initiated Ga-Deposition on Quartz Substrates

Published online by Cambridge University Press:  15 February 2011

Y. Rytz-Froidevaux ,
R.P. Salathe  and
H.H. Gilgen
Y. Rytz-Froidevaux
Affiliation:
Institute of Applied Physics, University of Berne, Sidlerstr. 5, 3012 Berne, Switzerland.
R.P. Salathe
Affiliation:
Institute of Applied Physics, University of Berne, Sidlerstr. 5, 3012 Berne, Switzerland.
H.H. Gilgen
Affiliation:
Institute of Applied Physics, University of Berne, Sidlerstr. 5, 3012 Berne, Switzerland.
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Abstract

The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under cw or mode-locking conditions. The deposition rate has been investigated as a function of averaged UV power densities in the range of 1.8 – 1750 w/cm2 and is shown to depend critically on the laser operating mode. For cw operation, the maximum growth rate within the focal zone is limited to 17 Å/s whereas under mode-locking conditions, no saturation is observed and the growth rate increases linearly with the laser power up to 70 Å/s at 1.75 kW/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 29
Copyright
Copyright © Materials Research Society 1983

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References

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