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Laser-Induced Deposition of Buried Insulator Lines in Mn-Zn Ferrite

Published online by Cambridge University Press:  25 February 2011

Y.F. Lu
Affiliation:
Department of Electrical Engineering, National University of Singapore, Singapore 0511
M. Takai
Affiliation:
Department of Electrical Engineering, Osaka University, Osaka 560, Japan
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Abstract

Maskless etching of single crystalline Mn-Zn ferrite (MnO: ZnO: Fe2O3 = 31:17:52) has been investigated in a SiCl4 atmosphere by Ar+ laser irradiation. The ferrite substrate can be thermochemically etched by a single scan of a laser beam. Silicon oxide was deposited simultaneously in the etched groove. The deposited silicon oxide lines were investigated by AES, XPS and RBS. It is found that the deposited lines were stoichiometric SiO2 under specific conditions. The etching and deposition process can be controlled by changing the SiCl4 gas pressure. A planarized SiO2 layer buried in ferrite was found not to affect the magnetic characteristics of the ferrite layer.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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