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Laser-Induced Chemical Etching of Solids: Promises and Challenges

Published online by Cambridge University Press:  21 February 2011

T. J. Chuang*
Affiliation:
IBM Research Laboratory, 5600 Cottle Road, San Jose, California 95193
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Abstract

Recent studies have shown the potential of laser-induced chemical etching to become a powerful technique for processing electronic materials. In this paper, the unique strengths and limitations of the laser chemical approach are examined. Some photon-enhanced reaction mechanisms, in particular silicon-halogen reactions, are discussed to illustrate the many facets of the electronically, vibrationally and thermally activated surface processes. It is suggested that the field-assisted diffusion mechanism proposed by Winters, Coburn and Chuang may also be applicable to some photon-induced etching reactions. In addition, the salient features of the laser and the plasma-assisted etching methods are compared. The challenges to resolve certain fundamental and practical difficulties involved in developing the laser technique for processing technology are also outlined.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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