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Laser-Controlled Etching of (Al,Ga)As Epitaxial Layers

Published online by Cambridge University Press:  15 February 2011

T.C. Chong ,
Y.F. Lu  and
A. Lee
T.C. Chong
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511
Y.F. Lu
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511
A. Lee
Affiliation:
Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 0511
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Abstract

We report a systematic study of laser-controlled etching behaviors of AlxGa1−xAs epitaxial layers (x from 0 to 0.5) by varying parameters such as laser power, beam scanning speed, beam duty cycle, number of scans and different doping types and concentrations. The laser source was an argon ion laser emitting at 514.5 n-type layers were found to be significantly higher than those for p-type layers. Generally, higher etch rates were observed for layers with higher aluminium mole fraction. The etch rate was found to increase at an exponential rate with the laser power for CW beam, but this increase became linear when a chopped laser beam was used. The dependence of etch rates on different conditions can be largely accounted for by the differences in the built-in electric field at the surface as well as differences in the laser-induced local temperature rise in the layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 491
Copyright
Copyright © Materials Research Society 1996

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References

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