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Laser Pulse Triggering of the Explosive Crystallization in Amorphous Si and Ge Thin Films

Published online by Cambridge University Press:  25 February 2011

W. Marine  and
J. Marfaing
W. Marine
Affiliation:
Groupe de Physique des Etats Condensés, U.A. CNRS 783, - Département de Physique, - Faculté des Sciences de Luminy, - Case 901, - 13288 Marseille Cedex 9, - France
J. Marfaing
Affiliation:
Groupe de Physique des Etats Condensés, U.A. CNRS 783, - Département de Physique, - Faculté des Sciences de Luminy, - Case 901, - 13288 Marseille Cedex 9, - France
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Abstract

The structure and morphologies of the thin amorphous a-Si and oc-Ge films crystallized “in situ” in an electronic microscope by pulsed YAG laser have been studied using conventional and high-resolution transmission electronic microscopy observations. It is found that the laser induced nucleation rate (I) is laser pulse length dependent. I is about 1021-1022 cm−3 s−1 (α-Si) and 1023-1025 cm−3 s−1 (α-Ge) near the melting point. Explosive dendritic formation is the result of competition between solid state light induced nucleation and melting mediated explosive growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 449
Copyright
Copyright © Materials Research Society 1990

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References

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