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Laser Microfabrication Technology and its Application to High Speed Interconnect of Gate Arrays

Published online by Cambridge University Press:  28 February 2011

Anthony F. Bernhardt
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Bruce M. McWilliams
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
Fred Mitlitsky
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
John C. Whitehead
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550
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Abstract

Nickel and doped polysilicon lines can be written at speeds exceeding 1000 microns/sec using laser direct-write deposition. We explore the roles of gas pressure, composition, and laser power in determining writing speed and line morphology. The use of a surface layer of amorphous silicon provides optical absorption, thermal and electrical insulation which help to maintain high, relatively stable, surface temperature.

Laser direct-write deposition is used to interconnect CMOS gate arrays by means of computer controlled laser pantography. Complex circuits, such as an array of five 16-stage shift registers and one 16-stage counter have been successfully fabricated and tested.

Type
Articles
Copyright
Copyright © Materials Research Society 1987

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References

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