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Laser Irradiation Effect on Saw Properties of Layered Structure of Oxide/Piezoelectric Substrate

Published online by Cambridge University Press:  10 February 2011

Yo Ichikawa ,
Masatoshi Kitagawa ,
Kentaro Setsune  and
Syun-ichiro Kawashima
Yo Ichikawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Co., Ltd., 3–4 Hikaridai, Seika, Soraku, Kyoto 619–02, Japan
Masatoshi Kitagawa
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Co., Ltd., 3–4 Hikaridai, Seika, Soraku, Kyoto 619–02, Japan
Kentaro Setsune
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Co., Ltd., 3–4 Hikaridai, Seika, Soraku, Kyoto 619–02, Japan
Syun-ichiro Kawashima
Affiliation:
Central Research Laboratories, Matsushita Electric Ind., Co., Ltd., 3–4 Hikaridai, Seika, Soraku, Kyoto 619–02, Japan
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Abstract

Using surface acoustic wave (SAW) propagating in the layered structure of oxide/piezoelectric substrate, a responsibility of the oxide thin films for the laser irradiation has been investigated. Amorphous Ti-O, Si-O and Si-X-O, where X is other metal elements, films were formed on the surface of the SAW device composed of quartz or LiTaO3 substrate and several hundred Al electrode fingers for oscillating and detecting the SAW. A KrF excimer laser with 248nm in wavelength was used for the irradiation. The center frequency of the SAW devices was immediately decreased by the irradiation of the laser pulses. Although the response to the irradiation was reversible for lower laser energy, the change of the center frequency was irreversible for the laser energy density higher than 20mJ/cm2. It is considered that the response appeared in the frequency shift is generated by a change of an elastic stiffness of the films lowered by an absorption of the laser energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 459: Symposium Y – Materials for Smart Systems II , 1996 , 237
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Esrom, H., Chemical Perspectives of Microelectronic Materials II. edited by Interrante, L. V., Jensen, K. F., Dubois, L. H., and Gross, M. E. (Mater. Res. Soc. Symp. Proc. 204, Pittsburgh, PA, 1991), 457.Google Scholar
2. Desilva, M. J., Pedraza, A. J., and Lowndes, D. H., J. Mater. Res. 9, 1019 (1994).Google Scholar
3. Pedraza, A. J., Park, J. W., Meyer, H. M. III, and Braski, D. N., J. Mater. Res. 9, 2251 (1994).Google Scholar
4. Ichikawa, Y., Adachi, H., Setsune, K., and Wasa, K., Appl. Surf. Sci. 60/61, 749 (1992).Google Scholar
5. Setsune, K., Yamazaki, O., and Wasa, K., Elect. Lett. 20, 433 (1984).Google Scholar
6. Raevskii, J.P., Rybyanets, A. N., Malitskaya, M. A., Poltavtsev, V. G., and Turik, A. V., Sov. Phys. Tech. Phys. 37, 475 (1992).Google Scholar
7. Komine, K., Araki, N., and Hohkawa, K., Proc. IEEE Ultrasonics Symp. 253 (1993).Google Scholar
8. Sinha, B. K., and Locke, S., Proc. IEEE Trans. Ultrasonics, Ferroelectrics, and Freq. Cont. UFFC-34, 29 (1987).Google Scholar
9. Yamanouchi, K., Satoh, H., Meguro, T., and Wagatsuma, Y., IEEE Trans. Ultrason., Ferroelectrics, and Freq. Cont. UFFC-42, 392 (1995).Google Scholar
10. Kino, G. S., and Wagers, R. S., J. Appl. Phys. 44, 1480 (1973).Google Scholar
11. Wang, Z., Cheeke, J. D. N., and Jen, C. K., IEEE Trans. Ultrason., Ferroelectrics, and Freq. Cont. UFFC-43, 844 (1996).Google Scholar