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Laser Annealing of Defects in Vpe and Cz Grown Gallium Arsenide with a Pulsed Nd:Yag Laser

Published online by Cambridge University Press:  15 February 2011

P. M. Mooney ,
J. C. Bourgoin  and
J. Icole
P. M. Mooney
Affiliation:
Groupe de Physique des Solides de l'ÉNS,**Université de Paris VII, Tour 23 2, place Jussieu, 75221, Paris Cedex 05, FRANCE
J. C. Bourgoin
Affiliation:
Groupe de Physique des Solides de l'ÉNS,**Université de Paris VII, Tour 23 2, place Jussieu, 75221, Paris Cedex 05, FRANCE
J. Icole
Affiliation:
Laboratoire Centrale de Recherche, Thompson CSF, Corbeville, B.P. 10, Orsay, FRANCE
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Abstract

Gallium arsenide crystals, both VPE and Cz grown, were annealed with a pulsed Nd:YAG laser. Gold Schottky diodes were fabricated and defects were studied using the DLTS technique. The native defect E(0.83eV) was found to anneal while other electron traps, E(0.39eV) in both materials and E(0.30eV)in Cz material, remained after irradiation. A new trap, E(0.70eV), was observed after laser irradiation in both materials.

Cz GaAs samples implanted with both Ga and As were also laser annealed. The E(0.83eV) level was not observed after implantation. The E(0.30eV) trap and new levels, E(0.44eV) and E(0.6leV) were observed. C-V measurements and defect profiles indicate that the recrystallized layer is far from defect free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 255
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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