Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-01T09:35:38.376Z Has data issue: false hasContentIssue false
  • English
  • Français

Large Area Lateral Photovoltaic Effects in Hydrogenated Amorphous Silicon Films

Published online by Cambridge University Press:  26 February 2011

Koji Okumura
Koji Okumura*
Affiliation:
Xerox Corporation, Webster Research Center, 800 Phillips Road, Webster, NY 14580
Get access

Abstract

Lateral photovoltages were measured in a 20 cm long strip of hydrogenated amorphous silicon deposited on a platinum foil. The position dependence was nonlinear. It was antisymmetric with respect to the center of the strip when the platinum substrate was electrically floating. If the platinum was grounded, the photovoltaic signal was zero at one end of the sample and increased monotonically to the other. The magnitude of the photovoltage was linearly dependent on the light intensity. The polarity of the photosignals when the sample was exposed to a flash of light at one position of its length was opposite to that of the semi-steady photovoltage when it was exposed to a steady light source. The phenomena can be explained on the basis of a model of charge carrier separation in the Schottky barrier junction at the point of illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 605
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wallmark, J.T., Proc. IRE 45 474 (1957).CrossRefGoogle Scholar
2. Lucovsky, G., J. Appl. Phys. 31, 1088 (1960).Google Scholar
3. Niu, H., Matsuda, T., Yamauchi, K. and Takai, M., J. Appl. Phys. Lett. 21 423 (1972).Google Scholar
4. Niu, H., Matsuda, T., Sadamatsu, H. and Takai, M., Jap. J. Appl. Phys. 15, 601 (1976).CrossRefGoogle Scholar
5. Petersson, R. and Lindholm, L., IEEE J. Solid State Circuits, SC-13 392 (1978).Google Scholar
6. Willens, R., Appl. Phys. Lett. 49, 663 (1986).CrossRefGoogle Scholar
7. Levine, B., Willens, R., Bethen, C. and Brasen, D., Appl. Phys. Lett. 49 1537 (1986).Google Scholar
8. Chen, I., (private communication), to be published in J. Appl. Phys.Google Scholar
9. Metal-Semiconductor Schottky Barrier Junctions and Their Applications, ed. Sharma, B., Plenum Press (1984).Google Scholar
10. Okumura, K., J. Appl. Phys. 45 5317, (1974).Google Scholar