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Large Area Electronics for Flat Panel Imagers Progress and Challenges

Published online by Cambridge University Press:  01 February 2011

J.P. Lu ,
K. Van Schuylenbergh ,
J. Ho ,
Y. Wang ,
J. B. Boyce  and
R. A. Street
J.P. Lu
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
K. Van Schuylenbergh
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. Ho
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
Y. Wang
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
J. B. Boyce
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
R. A. Street
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA
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Abstract

The technology of large area electronics has made significant progress in recent years because of the fast maturing excimer laser annealing process. The new thin film transistors based on laser processed poly silicon provide unprecedented performance over the traditional thin film transistors using amorphous silicon. They open up the possibility of building flat panel displays and imagers with higher integration and performance. In this paper, we will review the progress of poly-Si thin film transistor technology with emphasis on imager applications. We also discuss the challenges of future improvement of flat panel imagers based on this technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A4.1
Copyright
Copyright © Materials Research Society 2002

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