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Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films

Published online by Cambridge University Press:  25 February 2011

L.A. Clevenger ,
C.V. Thompson ,
R.R. de Avillez  and
K.N. Tu
L.A. Clevenger
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
C.V. Thompson
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139
R.R. de Avillez
Affiliation:
Pontificia Universidade Catolica, Dept. de Ciencia dos Materials e Metalurgia, 22453-Rio de Janeiro, RJ-Brazil
K.N. Tu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Cross-sectional transmission and scanning transmission electron microscopy and thermodynamic and kinetic analysis have been used to characterize amorphous and crystalline nickel silicide formation in nickel/amorphous-silicon multilayer thin films. An amorphous-nickelsilicide layer was formed between the nickel and amorphous-silicon layers during deposition. Heating caused crystalline Ni2Si to form at the nickel/amorphous-nickel-silicide interface. The composition of the amorphous-siicide was determined to be approximately 1 Ni atom to 1 Si atom. Thermodynamic analysis indicates that amorphous-nickel-silicide could be in equilibrium with nickel and amorphous-silicon if there were kinetic barriers to the formation of the crystalline silicides. Kinetic analysis indicates that the “nucleation surface energies” of the crystalline silicides, other than Ni3Si, must be 1.6 to 3.0 times larger than that of amorphous-nickel-silicide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 77
Copyright
Copyright © Materials Research Society 1989

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