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Kinetic Studies of CdS Formation for a Better Understanding of Chemical Buffer Layer Deposition

Published online by Cambridge University Press:  31 January 2011

Krzysztof Wilchelmi ,
Diana Förster ,
Axel Neisser  and
Reinhard Schomäcker
Krzysztof Wilchelmi
Affiliation:
wilchelmi@sulfurcell.de, Sulfurcell Solartechnik GmbH, Berlin, Germany
Diana Förster
Affiliation:
foerster@sulfurcell.de, Sulfurcell Solartechnik GmbH, Berlin, Germany
Axel Neisser
Affiliation:
neisser@sulfurcell.de, Sulfurcell Solartechnik GmbH, Berlin, Germany
Reinhard Schomäcker
Affiliation:
schomaecker@tu-berlin.de, Technical University Berlin, Department of Chemistry, Berlin, Germany
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Abstract

CdS is an important part of CIGS-based photovoltaics as a buffer layer between the absorber and the window layer. Chemical Bath Deposition (CBD) is the most common way of depositing CdS. Due to the nature of the CBD process CdS forms not only on the absorber layer surface but also in the bulk solution. In order to control the deposition of CdS at the surface and to avoidCdS formation in the bulk solution the kinetics of these reactions must be understood. In this work we study the formation of CdS in the chemical bath by using in situ spectroscopic extinction measurements. By monitoring the absorbance of the solution we are able to observe the bulk phase reaction (chemical formation of CdS in solution). Deposition of CdS (growth of the CdS layer at the surface) is investigated by measuring the CdS layer thickness after the reaction. The kinetics of both reactions were investigated by a systematic variation of temperature, initial reactant concentration, Reynold number as well as time. Finally the results of our study suggest a model of growth behaviour based on molecule-by-molecule deposition, which explains especially the dependency on temperature and hydrodynamics.

Keywords

crystal growthsolution depositionthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1165: Symposium M – Thin-Film Compound Semiconductor Photovoltaics–2009 , 2009 , 1165-M03-08
Copyright
Copyright © Materials Research Society 2009

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