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Kinetic Limits to Growth on GaAs by Omcvd

Published online by Cambridge University Press:  28 February 2011

D. E. Aspnes ,
R. Bhat ,
E. Colas ,
M. A. Koza ,
V. G. Keramidas  and
A. A. Studna
D. E. Aspnes
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
R. Bhat
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
E. Colas
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
M. A. Koza
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
V. G. Keramidas
Affiliation:
Bellcore, Red Bank, NJ 07701-7040
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Abstract

Using a real-time surface probe with 0.01 monolayer (ML) sensitivity, we determine the rate-limiting steps for atmospheric-pressure, alternating-layer-epitaxy OMCVD growth on (001) and (110) GaAs with trimethylgallium and arsine sources. The reaction of TMG with AsH3- saturated (001) GaAs is limited by a competition between decomposition (at 39 kcal/mole) and desorption of TMG chemisorbed (at −26 kcal/mole) via an excluded-volume mechanism. The reaction of AsH3with TMG-saturated (001) GaAs shows an initial fast transient followed by a slower recovery. On (110) GaAs, TMG reacts essentially instantaneously with an AsH3-saturated surface while the reaction of AsH3 with a TMG-saturated surface is relatively slow. In the latter case temperature and pressure dependences indicate a fast AsH3 -surface reaction that is blocked by an adsorbed species that must be desorbed before the AsH3 -surface reaction can take place.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 99
Copyright
Copyright © Materials Research Society 1989

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