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Kinetic Exchange Vs. Room Temperature Ferromagnetism in Diluted Magnetic Semiconductors

Published online by Cambridge University Press:  17 March 2011

J. Blinowski ,
P. Kacman  and
T. Dietl
J. Blinowski
Affiliation:
Institute of Theoretical Physics, Warsaw University, ul. Hoża 69, PL-00-681 Warszaw a, Poland
P. Kacman
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668Warszawa, Poland
T. Dietl
Affiliation:
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668Warszawa, Poland
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Abstract

Guided by the internal-reference rule and the known band o sets in - and - diluted magnetic semiconductors, we discuss the feasibility of obtaining p-type conductivity, required for the carrier-induced ferromagnetism, as well as the cases for which the doping by shallow impurities may lead to the ferromagnetism driven by the double exchange. e consider the dependence of kinetic exchange on the p-d hybridization, on the electronic con gurations of the magnetic ions, and on the energies of the charge transfer betw een the valence band of host materials and the magnetic ions. n the case of n-based - compounds, the doping by acceptors is necessary for the hole-induced ferromagnetism. he latter is, how ever, possible without any doping for some of Mn-, Fe- or Co-based - magnetic semiconductors. n nitrides with Fe or Co carrier-induced ferromagnetism with TC > 300 is expected in the presence of acceptor doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 690: Symposium F – Spintronics , 2001 , F6.9
Copyright
Copyright © Materials Research Society 2002

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References

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