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Kinetic Control of CaF2 on Si(111) Growth Morphology

Published online by Cambridge University Press:  15 February 2011

J. D. Denlinger ,
Eli Rotenberg ,
U. Hessingert ,
M. Leskovar  and
Marjorie A. Olmstead
J. D. Denlinger
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
Eli Rotenberg
Affiliation:
Department of Physics, University of California, Berkeley, CA 94720 Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720
U. Hessingert
Affiliation:
Department of Physics FM-15, University of Washington, Seattle, WA 98195
M. Leskovar
Affiliation:
Department of Physics FM-15, University of Washington, Seattle, WA 98195
Marjorie A. Olmstead
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720 Department of Physics FM-15, University of Washington, Seattle, WA 98195
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Abstract

Thin (0.5 to 8 triple layer) CaF2 on Si(111) films were grown using molecular beam epitaxy (MBE) and characterized using an in situ combination of x-ray photoelectron spectroscopy (XPS) and componentresolved x-ray photoelectron diffraction (XPD). We identified surface, bulk-like, and interface F and Ca core-level shifts and used the XPS shifts and XPD modulations to identify the growth modes as a function of the kinetic parameters of CaF2 flux and Si temperature. We identify 3 distinct regimes: (i) for high temperatures and flux we find a complete reacted F-Ca-Si layer, overlaid by 2 layer high islands which coalesce, followed by layer-by-layer growth, (ii) for high temperature and low flux, we find the reacted F-Ca-Si layer to be partially covered with thick islands, and (iii) for low temperatures we find an incompletely occupied F-Ca-Si layer followed by layer-by-layer growth. In all cases we find the buried interface to be structurally identical to the unburied F-Ca-Si layer

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 207
Copyright
Copyright © Materials Research Society 1993

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