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Kinetic Competition During Solid Phase Crystallization in Ion–Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

G.L. Olson ,
J.A. Roth ,
L.D. Hess  and
J. Narayan
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J.A. Roth
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. Narayan
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265 Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

We report on an investigation of the temperature and concentration dependent kinetic competition between solid phase epitaxy and complex formation and precipitation in arsenic–implanted Si(100). Crystallization kinetics were monitored using time–resolved reflectivity during cw laser irradiation or furnace heating; microstructural changes were evaluated using cross–sectional TEM. At low temperatures and high As concentrations, complex formation and precipitation substantially alter the SPE kinetics. At higher temperatures competing interactions are less significant, and SPE becomes the dominant process. The kinetic competition between these processes is discussed with respect to the vacancy model for SPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 375
Copyright
Copyright © Materials Research Society 1984

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References

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