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A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  17 March 2011

D. Caputo ,
G. de Cesare ,
A. Nascetti ,
V. Kellezi  and
F. Palma
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
G. de Cesare
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
A. Nascetti
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
V. Kellezi
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza”via Eudossiana 18, 00184, Rome, Italy
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Abstract

An hydrogenated amorphous silicon junction field effect transistor suitable for analog and digital applications is presented. The device is constituted by a p+ - i - n− junction, with the drain and source contacts patterned on the n-doped layer and the gate electrode patterned on the p+ doped layer. As in the crystalline case, the device is a voltage-controlled resistor, and its drain-source resistance can be varied, with a voltage applied to the gate electrode, by modulating the width of the depletion layer extending into the n-type channel.

The doping value of this layer has been chosen as a trade-off between high value of channel conductivity and a relatively low defect density in the material. The manufactured device, with W/L=5000/200 μm, shows the typical current-voltage curves of a JFET. In particular, at low VDS, the current presents the linear behavior of the triode zone, where the JFET operates as a linear resistance whose value is controlled by the gate voltage. At higher VDS the JFET works in the pinch-off region as a dependent current generator.

First results are very encouraging, since we have achieved transconductance values of 10−6 V/A, which are comparable to those of state of the art TFT.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A31.1
Copyright
Copyright © Materials Research Society 2000

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References

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